IRS2153DPBF Half-Bridge Driver Chip Technical Analysis and Design Guide

  ^{August 21, 2025 News — With the rapid advancement of motor drive and power electronics technology, the half-bridge driver chip IRS2153DPBF is becoming a core solution in industrial motor control due to its exceptional technical performance and high reliability. Utilizing advanced 600V high-voltage IC technology, the chip supports a wide VCC operating voltage range of 10V to 20V, with a quiescent current of only 1.7mA (typical) and standby current below 100μA. It integrates a bootstrap diode and level-shift circuit, providing efficient half-bridge drive support for variable-frequency air conditioners, industrial servo drives, and switching power supplies. The maximum switching frequency reaches 200kHz, with propagation}

^{delay matching accuracy as high as 50ns.}

^{The IRS2153DPBF adopts a standard PDIP-8 package measuring 9.81mm×6.35mm×4.45mm, integrating a bootstrap diode and level-shift functionality. The chip incorporates a propagation delay matching circuit with a typical value of 50ns, while the high-side and low-side drive propagation delays are 480ns and 460ns respectively (at VCC=15V). Its operating junction temperature range spans -40℃ to 150℃, with a storage temperature range of -55℃ to 150℃. The lead-free package material complies with RoHS standards. The input logic is compatible with 3.3V/5V CMOS levels, and the output stage utilizes a totem-pole structure with peak output currents reaching +290mA/-600mA.}

^{The chip integrates comprehensive undervoltage lockout (UVLO) protection, with high-side and low-side UVLO thresholds of 8.7V/8.3V (turn-on/turn-off) and 8.9V/8.5V respectively, featuring 50mV hysteresis voltage. Manufactured using advanced noise-immune CMOS technology, it provides common-mode noise immunity of ±50V/ns and dV/dt immunity up to 50V/ns. The internally fixed dead time of 520ns effectively prevents shoot-through, while supporting external dead time extension. The bootstrap diode offers 600V reverse voltage tolerance, 0.36A forward current, and a reverse recovery time of only 35ns.} 

^{1.Variable-Frequency Air Conditioner Compressor Drives: Supports 20kHz PWM switching frequency with drive current capability meeting most IGBT and MOSFET requirements}

^{2.Industrial Servo Drives: Capable of driving half-bridge structures in three-phase inverters with support for 100kHz switching frequency}

^{3.Switching Power Supply Synchronous Rectification: Achieves conversion efficiency exceeding 95%, particularly suitable for communication and server power supplies}

^{4.High-Density Power Modules: Its compact package design accommodates power densities over 50W/in³}

Additional Characteristics:

^{Diode Forward Voltage: 1.3V (typical) at IF=0.1A
Reverse Recovery Time: 35ns (max)
Output Resistance: 4.5Ω (typical) in high state
dV/dt Immunity: ±50V/ns (min)
Storage Temperature: -55℃ to 150℃
Package Thermal Resistance: 80℃/W (θJA)}

1.VCC Pin: Requires parallel connection of 0.1μF ceramic capacitor and 10μF electrolytic capacitor
 

2.Bootstrap Capacitor: Recommended 0.1μF/25V X7R ceramic capacitor with tolerance ≤±10%
 

3.Gate Driving: Series 10Ω gate resistors (power rating ≥0.5W) for both high-side and low-side outputs

4.Overvoltage Protection: Add 18V/1W Zener diode between VS and COM
 

5.Bootstrap Diode: Ultrafast recovery diode with reverse recovery time <35ns and reverse voltage rating ≥600V

6.PCB Layout:
   Place bootstrap components as close to the chip as possible
   Maintain minimum 2mm spacing for high-voltage traces
   Implement star-point connection for power ground and control ground

Design Description

Circuit Topology:This design adopts a half-bridge drive architecture, with the IRS2153DPBF as the core driver chip, combined with external power MOSFETs to form a complete half-bridge circuit. Both the high-side and low-side drive channels integrate bootstrap power supply structures to ensure stable power delivery for the high-side drive.

Key Component Selection Specifications

^{1.Gate Resistors (R1, R2)}

^{Resistance: 10Ω ±1%}

^{Power Rating: 0.5W (minimum requirement)}

^{Type: Metal film resistor, withstand voltage ≥50V}

^{Temperature Coefficient: ±50ppm/℃}

^{2.Bootstrap Resistor (R3)}

^{Resistance: 100Ω ±5%}

^{Function: Limits bootstrap capacitor charging current}

^{Power Rating: 0.25W}

^{3.Current Sense Resistors (R4-R10)}

^{Resistance: 0.1Ω ±1%}

^{Power Rating: 2W (based on maximum current calculation)}

^{Type: Metal foil resistor, low-inductance design}

^{Temperature Coefficient: ±50ppm/℃}

^{4.Voltage Divider Network Resistors (R11-R20)}

^{Resistance Tolerance: ±1%}

^{Temperature Coefficient: ±25ppm/℃}

^{Rated Voltage: ≥100V}

^{Layout and Routing Requirements}

^{1.Power Loop Layout}

^{High-side switching loop area ≤ 2cm²}

^{Low-side switching loop symmetrically arranged with high-side loop}

^{Power ground designed with star-point connection}

^2.Signal Trace Routing

^{Drive signal trace length ≤ 5cm}

^{Differential pair routing with spacing = 2× trace width}

^{Signal traces cross power traces perpendicularly; avoid parallel routing}

^{3.Thermal Design Considerations}

^{Power resistors utilize bottom-side heat dissipation design}

^{Chip backside copper pour area ≥ 25mm²}

^{Thermal via array: 1.2mm pitch, 0.3mm diameter}

Protection Circuit Design

^{1.Overcurrent Protection}

^{Comparator circuit with 100ns response time}

^{Protection threshold: 25A ±5%}

^{Hardware blanking time: 200ns}

^{2.Overtemperature Protection}

^{Temperature sensor placed at center of power device}

^{Protection threshold: 125℃ ±5%}

^{Hysteresis range: 15℃}

^{3.Undervoltage Protection}

^{VCC undervoltage lockout: 8.7V/8.3V (turn-on/turn-off)}

^{VB undervoltage detection: 10.5V ±0.2V}

^{Protection recovery hysteresis: 0.4V}

^{Reliability Design}

^{1.Derating Design}

^{Resistor power derating: <75% of rated value}

^{Voltage stress derating: <80% of rated value}

^{Current stress derating: <70% of rated value}

^{2.Environmental Adaptability}

^{Operating temperature: -40℃ to 125℃}

^{Humidity range: 5% to 95% RH}

^{Protection rating: IP20}

^{3.Lifetime Indicators}

^{Design life: >100,000 hours}

^{MTBF: >500,000 hours}

^{Failure rate: <100ppm}

Note:This analysis is based on IRS2153DPBF technical documentation; please refer to the official datasheet for specific design details.