SIR422DP-T1-GE3 QFN8 SMD MOSFET Transistor Chip N Channel 40V/20.5A
Specifications
Operating Temperature:
-55°C ~ 150°C, -55°C ~ 150°C(TJ)
Series:
SIR
Description:
MOSFETs, -
Type:
MOSFET , Transistors
D/C:
23+, 23+
Package Type:
Surface Mount
Application:
General Purpose, All Kinds Of Electronic Products
Supplier Type:
Other
Cross Reference:
-
Media Available:
Photo
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
5W(Ta),34.7W(Tc)
Frequency - Transition:
-
Mounting Type:
Surface Mount, Surface Mount
Package / Case:
QFN8
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
FET Type:
N-channel
FET Feature:
-
Drain To Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
20.5 A
Rds On (Max) @ Id, Vgs:
6.6 M @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs:
48 NC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
1785 PF @ 20 V
Frequency:
-
Current Rating (Amps):
-
Noise Figure:
-
Power - Output:
-
Voltage - Rated:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Vgs (Max):
±20V
IGBT Type:
FET,MOSFET
Configuration:
Single Phase
Vce(on) (Max) @ Vge, Ic:
-
Input Capacitance (Cies) @ Vce:
1785 PF @ 20 V
Input:
-
NTC Thermistor:
-
Voltage - Breakdown (V(BR)GSS):
40 V
Current - Drain (Idss) @ Vds (Vgs=0):
-
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS Off) @ Id:
-
Resistance - RDS(On):
-
Voltage - Output:
-
Voltage - Offset (Vt):
-
Current - Gate To Anode Leakage (Igao):
-
Current - Valley (Iv):
-
Current - Peak:
-
Transistor Type:
MOSFET
Product Name:
SIR422DP-T1-GE3
Original Fromm:
Original Brand
Detalis:
Please Contact Us
Shipping By:
DHL\UPS\Fedex\EMS\HK Post
Payment:
Paypal Western Union T/t
Condition:
Brand Newand Original
Warranty:
365 Days Warranty
Quality:
Original High-quality
Voltage:
-
Applications:
Standard
Highlight:
SIR422DP-T1-GE3
,QFN8 SMD MOSFET
,40V/20.5A MOSFET Chip
Introduction
Product Description
Product type:
|
Single field effect transistor MOSFET
|
Model Number:
|
SIR422DP-T1-GE3
|
Series:
|
SIR
|
Vendor:
|
VISHAY
|
Packaging:
|
QFN8
|
Install the style:
|
Surface mount
|
|
New and original
|
SIR422DP-T1-GE3 QFN8 Single field effect transistor MOSFET is one of our best-selling IC chips
Contact Person:
|
Mr.Guo
|
|
|
Tel:
|
+86 13434437778
|
|
|
Email:
|
XCDZIC@163.COM
|
|
|
Wechat:
|
0086 13434437778
|
|
Packing & Delivery
Quantity(pieces)
|
1-100
|
100-1000
|
1000-10000
|
Lead time (days)
|
3-5
|
5-8
|
To be negotiated
|




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